HN3C51F-GR(TE85L,F

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Overview of HN3C51F-GR(TE85L,F

Part NumberHN3C51F-GR(TE85L,F
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS 2NPN 120V 0.1A SM6
DatasheetsDownload HN3C51F-GR(TE85L,F Datasheet PDFPDF Icon
Price for HN3C51F-GR(TE85L,F

Specification of HN3C51F-GR(TE85L,F

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6

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