IMBF170R650M1XTMA1

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Overview of IMBF170R650M1XTMA1

Part NumberIMBF170R650M1XTMA1
ManufacturerInfineon Technologies
DescriptionSICFET N-CH 1700V 7.4A TO263-7
DatasheetsDownload IMBF170R650M1XTMA1 Datasheet PDFPDF Icon
Price for IMBF170R650M1XTMA1

Specification of IMBF170R650M1XTMA1

Status
Active
Series
CoolSiC™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V, 15V
Rds On (Max) @ Id, Vgs
650mOhm @ 1.5A, 15V
Vgs(th) (Max) @ Id
5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 12 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
422 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-13
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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