IMW120R045M1XKSA1

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Overview of IMW120R045M1XKSA1

Part NumberIMW120R045M1XKSA1
ManufacturerInfineon Technologies
DescriptionSICFET N-CH 1.2KV 52A TO247-3
DatasheetsDownload IMW120R045M1XKSA1 Datasheet PDFPDF Icon
Price for IMW120R045M1XKSA1

Specification of IMW120R045M1XKSA1

Status
Not For New Designs
Series
CoolSiC™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 15 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3

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