IMYH200R100M1HXKSA1

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Overview of IMYH200R100M1HXKSA1

Part NumberIMYH200R100M1HXKSA1
ManufacturerInfineon Technologies
DescriptionSIC DISCRETE
Price for IMYH200R100M1HXKSA1

Specification of IMYH200R100M1HXKSA1

Status
Active
Series
CoolSiC™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
131mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 18 V
Vgs (Max)
+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
217W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-U04
Package / Case
TO-247-4

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