IPA80R1K4P7

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Overview of IPA80R1K4P7

Part NumberIPA80R1K4P7
ManufacturerInfineon Technologies
DescriptionPOWER FIELD-EFFECT TRANSISTOR
DatasheetsDownload IPA80R1K4P7 Datasheet PDFPDF Icon
Price for IPA80R1K4P7

Specification of IPA80R1K4P7

Status
Active
Series
CoolMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 70A
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
24W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-31 Full Pack
Package / Case
TO-220-3 Full Pack

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