IPAW60R180P7SXKSA1

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Overview of IPAW60R180P7SXKSA1

Part NumberIPAW60R180P7SXKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CHANNEL 650V 18A TO220
DatasheetsDownload IPAW60R180P7SXKSA1 Datasheet PDFPDF Icon
Price for IPAW60R180P7SXKSA1

Specification of IPAW60R180P7SXKSA1

Status
Not For New Designs
Series
CoolMOS™ P7
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 280A
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1081 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
26W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220 Full Pack
Package / Case
TO-220-3 Full Pack

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