IPB025N10N3GATMA1

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Overview of IPB025N10N3GATMA1

Part NumberIPB025N10N3GATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 180A TO263-7
DatasheetsDownload IPB025N10N3GATMA1 Datasheet PDFPDF Icon
Price for IPB025N10N3GATMA1

Specification of IPB025N10N3GATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 275A
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
14800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7
Package / Case
TO-263-7, DPak (6 Leads + Tab)

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