IPB100N04S303ATMA1

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Overview of IPB100N04S303ATMA1

Part NumberIPB100N04S303ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 40V 100A TO263-3
DatasheetsDownload IPB100N04S303ATMA1 Datasheet PDFPDF Icon
Price for IPB100N04S303ATMA1

Specification of IPB100N04S303ATMA1

Status
Not For New Designs
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 150A
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
9600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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