IPB160N04S2L03ATMA1

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Overview of IPB160N04S2L03ATMA1

Part NumberIPB160N04S2L03ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 40V 160A TO263-7
DatasheetsDownload IPB160N04S2L03ATMA1 Datasheet PDFPDF Icon
Price for IPB160N04S2L03ATMA1

Specification of IPB160N04S2L03ATMA1

Status
Discontinued at Digi-Key
Series
OptiMOS™
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, DPak (6 Leads + Tab)

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