IPB47N10S33ATMA1

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Overview of IPB47N10S33ATMA1

Part NumberIPB47N10S33ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 47A TO263-3
DatasheetsDownload IPB47N10S33ATMA1 Datasheet PDFPDF Icon
Price for IPB47N10S33ATMA1

Specification of IPB47N10S33ATMA1

Status
Obsolete
Series
SIPMOS®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Nexperia USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1425 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669

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