IPD50R500CE

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Overview of IPD50R500CE

Part NumberIPD50R500CE
ManufacturerInfineon Technologies
DescriptionIPD50R500 - 500V COOLMOS N-CHANN
DatasheetsDownload IPD50R500CE Datasheet PDFPDF Icon
Price for IPD50R500CE

Specification of IPD50R500CE

Status
Active
Series
CoolMOS CE™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id
3.5V @ 200A
Gate Charge (Qg) (Max) @ Vgs
18.7 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
433 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-344
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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