IPG16N10S4-61

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Overview of IPG16N10S4-61

Part NumberIPG16N10S4-61
ManufacturerInfineon Technologies
DescriptionIPG16N10 - 75V-100V N-CHANNEL AU
DatasheetsDownload IPG16N10S4-61 Datasheet PDFPDF Icon
Price for IPG16N10S4-61

Specification of IPG16N10S4-61

Status
Active
Series
OptiMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
16A (Tc)
Rds On (Max) @ Id, Vgs
61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3.5V @ 9A
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
490pF @ 25V
Power - Max
29W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4

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