IPI100N04S4H2AKSA1

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Overview of IPI100N04S4H2AKSA1

Part NumberIPI100N04S4H2AKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 40V 100A TO262-3
DatasheetsDownload IPI100N04S4H2AKSA1 Datasheet PDFPDF Icon
Price for IPI100N04S4H2AKSA1

Specification of IPI100N04S4H2AKSA1

Status
Obsolete
Series
OptiMOS™
Package
Tube,Tube
Supplier
Rochester Electronics, LLC,Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 70A
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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