IPI60R099CPAAKSA1

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Overview of IPI60R099CPAAKSA1

Part NumberIPI60R099CPAAKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 600V 31A TO262-3
DatasheetsDownload IPI60R099CPAAKSA1 Datasheet PDFPDF Icon
Price for IPI60R099CPAAKSA1

Specification of IPI60R099CPAAKSA1

Status
Obsolete
Series
CoolMOS™
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
255W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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