IPL65R099C7AUMA1

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Overview of IPL65R099C7AUMA1

Part NumberIPL65R099C7AUMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 21A 4VSON
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Price for IPL65R099C7AUMA1

Specification of IPL65R099C7AUMA1

Status
Active
Series
CoolMOS™ C7
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id
4V @ 590A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2140 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-VSON-4
Package / Case
4-PowerTSFN

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