IPP045N10N3G

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Overview of IPP045N10N3G

Part NumberIPP045N10N3G
ManufacturerInfineon Technologies
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
Price for IPP045N10N3G

Specification of IPP045N10N3G

Status
Active
Series
OptiMOS™ 3
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
137A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 150A
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
8410 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3

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