IPP110N20NAAKSA1

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Overview of IPP110N20NAAKSA1

Part NumberIPP110N20NAAKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 200V 88A TO220-3
DatasheetsDownload IPP110N20NAAKSA1 Datasheet PDFPDF Icon
Price for IPP110N20NAAKSA1

Specification of IPP110N20NAAKSA1

Status
Active
Series
OptimWatt™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id
4V @ 270A
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3

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