IPS60R1K0PFD7SAKMA1

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Overview of IPS60R1K0PFD7SAKMA1

Part NumberIPS60R1K0PFD7SAKMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 4.7A TO251-3
DatasheetsDownload IPS60R1K0PFD7SAKMA1 Datasheet PDFPDF Icon
Price for IPS60R1K0PFD7SAKMA1

Specification of IPS60R1K0PFD7SAKMA1

Status
Not For New Designs
Series
CoolMOS™PFD7
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50A
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
26W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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