IPS60R3K4CEAKMA1

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Overview of IPS60R3K4CEAKMA1

Part NumberIPS60R3K4CEAKMA1
ManufacturerInfineon Technologies
DescriptionCONSUMER
DatasheetsDownload IPS60R3K4CEAKMA1 Datasheet PDFPDF Icon
Price for IPS60R3K4CEAKMA1

Specification of IPS60R3K4CEAKMA1

Status
Not For New Designs
Series
CoolMOS™ CE
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
2.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40A
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
93 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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