IPT020N10N5ATMA1

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Overview of IPT020N10N5ATMA1

Part NumberIPT020N10N5ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 31A/260A 8HSOF
DatasheetsDownload IPT020N10N5ATMA1 Datasheet PDFPDF Icon
Price for IPT020N10N5ATMA1

Specification of IPT020N10N5ATMA1

Status
Active
Series
OptiMOS™5
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
31A (Ta), 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id
3.8V @ 202A
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
273W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-1
Package / Case
8-PowerSFN

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