IPU60R1K4C6

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Overview of IPU60R1K4C6

Part NumberIPU60R1K4C6
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IPU60R1K4C6 Datasheet PDFPDF Icon
Price for IPU60R1K4C6

Specification of IPU60R1K4C6

Status
Active
Series
CoolMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90A
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28.4W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO-251-3-341
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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