IQE006NE2LM5CGSCATMA1

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Overview of IQE006NE2LM5CGSCATMA1

Part NumberIQE006NE2LM5CGSCATMA1
ManufacturerInfineon Technologies
DescriptionOPTIMOS LOWVOLTAGE POWER MOSFET
DatasheetsDownload IQE006NE2LM5CGSCATMA1 Datasheet PDFPDF Icon
Price for IQE006NE2LM5CGSCATMA1

Specification of IQE006NE2LM5CGSCATMA1

Status
Active
Series
OptiMOS™ 5
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
47A (Ta), 310A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.58mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
16V
Input Capacitance (Ciss) (Max) @ Vds
5453 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 89W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-WHTFN-9-1
Package / Case
9-PowerWDFN

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