IQE030N06NM5SCATMA1

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Overview of IQE030N06NM5SCATMA1

Part NumberIQE030N06NM5SCATMA1
ManufacturerInfineon Technologies
DescriptionOPTIMOS LOWVOLTAGE POWER MOSFET
DatasheetsDownload IQE030N06NM5SCATMA1 Datasheet PDFPDF Icon
Price for IQE030N06NM5SCATMA1

Specification of IQE030N06NM5SCATMA1

Status
Active
Series
OptiMOS™ 5
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
21A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.3V @ 50A
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3800 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 100W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-WHSON-8-1
Package / Case
8-PowerWDFN

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