IRC830PBF

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of IRC830PBF

Part NumberIRC830PBF
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 500V 4.5A TO220-5
DatasheetsDownload IRC830PBF Datasheet PDFPDF Icon
Price for IRC830PBF

Specification of IRC830PBF

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 25 V
FET Feature
Current Sensing
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-5
Package / Case
TO-220-5

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