IRF5802TRPBF

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Overview of IRF5802TRPBF

Part NumberIRF5802TRPBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 150V 900MA MICRO6
DatasheetsDownload IRF5802TRPBF Datasheet PDFPDF Icon
Price for IRF5802TRPBF

Specification of IRF5802TRPBF

Status
Active
Series
HEXFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
88 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro6(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6

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