IRF5810TR

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Overview of IRF5810TR

Part NumberIRF5810TR
ManufacturerInfineon Technologies
DescriptionMOSFET 2P-CH 20V 2.9A 6-TSOP
DatasheetsDownload IRF5810TR Datasheet PDFPDF Icon
Price for IRF5810TR

Specification of IRF5810TR

Status
Obsolete
Series
HEXFET®
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
2.9A
Rds On (Max) @ Id, Vgs
90mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 16V
Power - Max
960mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP

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