IRF6662TRPBF

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Overview of IRF6662TRPBF

Part NumberIRF6662TRPBF
ManufacturerInternational Rectifier
DescriptionIRF6662 - 12V-300V N-CHANNEL POW
DatasheetsDownload IRF6662TRPBF Datasheet PDFPDF Icon
Price for IRF6662TRPBF

Specification of IRF6662TRPBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id
4.9V @ 100A
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET MZ
Package / Case
DirectFET Isometric MZ

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