IRF6665TRPBF

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Overview of IRF6665TRPBF

Part NumberIRF6665TRPBF
ManufacturerInternational Rectifier
DescriptionIRF6665 - 12V-300V N-CHANNEL POW
DatasheetsDownload IRF6665TRPBF Datasheet PDFPDF Icon
Price for IRF6665TRPBF

Specification of IRF6665TRPBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET SH
Package / Case
DirectFET Isometric SH

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