IRF6708S2TRPBF

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Overview of IRF6708S2TRPBF

Part NumberIRF6708S2TRPBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 30V 13A DIRECTFET S1
DatasheetsDownload IRF6708S2TRPBF Datasheet PDFPDF Icon
Price for IRF6708S2TRPBF

Specification of IRF6708S2TRPBF

Status
Obsolete
Series
HEXFET®
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.9mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25A
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 20W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET Isometric S1
Package / Case
DirectFET Isometric S1

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