IRF7831PBF

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Overview of IRF7831PBF

Part NumberIRF7831PBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 30V 21A 8SO
DatasheetsDownload IRF7831PBF Datasheet PDFPDF Icon
Price for IRF7831PBF

Specification of IRF7831PBF

Status
Discontinued at Digi-Key
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.35V @ 250A
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
6240 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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