IRF830LPBF

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Overview of IRF830LPBF

Part NumberIRF830LPBF
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 500V 4.5A TO262-3
DatasheetsDownload IRF830LPBF Datasheet PDFPDF Icon
Price for IRF830LPBF

Specification of IRF830LPBF

Status
Active
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 74W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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