IRF8910TRPBF-1

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Overview of IRF8910TRPBF-1

Part NumberIRF8910TRPBF-1
ManufacturerInfineon Technologies
DescriptionMOSFET
Price for IRF8910TRPBF-1

Specification of IRF8910TRPBF-1

Status
Obsolete
Series
HEXFET®
Package
Bulk
Supplier
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
10A (Ta)
Rds On (Max) @ Id, Vgs
13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.55V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
960pF @ 10V
Power - Max
2W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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