IRF9Z24

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Overview of IRF9Z24

Part NumberIRF9Z24
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 60V 11A TO220AB
DatasheetsDownload IRF9Z24 Datasheet PDFPDF Icon
Price for IRF9Z24

Specification of IRF9Z24

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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