IRFB5620PBF

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Overview of IRFB5620PBF

Part NumberIRFB5620PBF
ManufacturerInternational Rectifier
DescriptionIRFB5620 - 12V-300V N-CHANNEL PO
DatasheetsDownload IRFB5620PBF Datasheet PDFPDF Icon
Price for IRFB5620PBF

Specification of IRFB5620PBF

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
72.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 100A
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1710 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
144W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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