IRFBA90N20DPBF

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Overview of IRFBA90N20DPBF

Part NumberIRFBA90N20DPBF
ManufacturerInternational Rectifier
DescriptionIRFBA90N20 - SMPS HEXFET
DatasheetsDownload IRFBA90N20DPBF Datasheet PDFPDF Icon
Price for IRFBA90N20DPBF

Specification of IRFBA90N20DPBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
23mOhm @ 59A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
6080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
650W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
SUPER-220 (TO-273AA)
Package / Case
TO-273AA

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