IRFHM8337TRPBF-IR

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Overview of IRFHM8337TRPBF-IR

Part NumberIRFHM8337TRPBF-IR
ManufacturerInternational Rectifier
DescriptionMOSFET N-CH 30V 12A 8PQFN DL
DatasheetsDownload IRFHM8337TRPBF-IR Datasheet PDFPDF Icon
Price for IRFHM8337TRPBF-IR

Specification of IRFHM8337TRPBF-IR

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25A
Gate Charge (Qg) (Max) @ Vgs
8.1 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
755 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 25W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN-Dual (3.3x3.3), Power33
Package / Case
8-PowerVDFN

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