IRFNL210BTA-FP001

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Overview of IRFNL210BTA-FP001

Part NumberIRFNL210BTA-FP001
Manufactureronsemi
DescriptionIRFNL210 - POWER MOSFET, N-CHANN
DatasheetsDownload IRFNL210BTA-FP001 Datasheet PDFPDF Icon
Price for IRFNL210BTA-FP001

Specification of IRFNL210BTA-FP001

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92L
Package / Case
TO-226-3, TO-92-3 Long Body

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