IRFR1018EPBF-INF

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Overview of IRFR1018EPBF-INF

Part NumberIRFR1018EPBF-INF
ManufacturerInfineon Technologies
DescriptionHEXFET POWER MOSFET
Price for IRFR1018EPBF-INF

Specification of IRFR1018EPBF-INF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id
4V @ 100A
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-PAK (TO-252AA)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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