ISC058N04NM5ATMA1

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Overview of ISC058N04NM5ATMA1

Part NumberISC058N04NM5ATMA1
ManufacturerInfineon Technologies
Description40V 5.8M OPTIMOS MOSFET SUPERSO8
DatasheetsDownload ISC058N04NM5ATMA1 Datasheet PDFPDF Icon
Price for ISC058N04NM5ATMA1

Specification of ISC058N04NM5ATMA1

Status
Active
Series
OptiMOS™-5
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
5.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
3.4V @ 13A
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 42W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8 FL
Package / Case
8-PowerTDFN

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