IV1D12010O2

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Overview of IV1D12010O2

Part NumberIV1D12010O2
ManufacturerInventchip
DescriptionDIODE SIL CARB 1.2KV 28A TO220-2
DatasheetsDownload IV1D12010O2 Datasheet PDFPDF Icon
Price for IV1D12010O2

Specification of IV1D12010O2

Status
Active
Package
Tube
Supplier
Inventchip
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
28A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
575pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55C ~ 175C

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