IXFA8N65X2

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Overview of IXFA8N65X2

Part NumberIXFA8N65X2
ManufacturerLittelfuse
DescriptionMOSFET N-CH 650V 8A TO263
DatasheetsDownload IXFA8N65X2 Datasheet PDFPDF Icon
Price for IXFA8N65X2

Specification of IXFA8N65X2

Status
Active
Series
HiPerFET™, Ultra X2
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2Pak)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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