IXFK200N10P

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Overview of IXFK200N10P

Part NumberIXFK200N10P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 100V 200A TO264AA
DatasheetsDownload IXFK200N10P Datasheet PDFPDF Icon
Price for IXFK200N10P

Specification of IXFK200N10P

Status
Active
Series
HiPerFET™, Polar
Package
Box
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
830W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA

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