IXFK210N17T

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Overview of IXFK210N17T

Part NumberIXFK210N17T
ManufacturerLittelfuse
DescriptionMOSFET N-CH 170V 210A TO264AA
DatasheetsDownload IXFK210N17T Datasheet PDFPDF Icon
Price for IXFK210N17T

Specification of IXFK210N17T

Status
Obsolete
Series
GigaMOS™
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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