IXFK26N120P

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Overview of IXFK26N120P

Part NumberIXFK26N120P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1200V 26A TO264AA
DatasheetsDownload IXFK26N120P Datasheet PDFPDF Icon
Price for IXFK26N120P

Specification of IXFK26N120P

Status
Active
Series
HiPerFET™, Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
460mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
225 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
16000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
960W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA

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