IXFN66N50Q2

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Overview of IXFN66N50Q2

Part NumberIXFN66N50Q2
ManufacturerLittelfuse
DescriptionMOSFET N-CH 500V 66A SOT-227B
DatasheetsDownload IXFN66N50Q2 Datasheet PDFPDF Icon
Price for IXFN66N50Q2

Specification of IXFN66N50Q2

Status
Obsolete
Series
HiPerFET™
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
199 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
6800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
735W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

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