IXFT26N100XHV

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Overview of IXFT26N100XHV

Part NumberIXFT26N100XHV
ManufacturerLittelfuse
DescriptionMOSFET N-CH 1000V 26A TO268HV
Price for IXFT26N100XHV

Specification of IXFT26N100XHV

Status
Active
Series
HiPerFET™, Ultra X
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25C
26A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
113 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
860mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268HV (IXFT)
Package / Case
TO-268-3, DPak (2 Leads + Tab), TO-268AA

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