IXTA10N60P

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Overview of IXTA10N60P

Part NumberIXTA10N60P
ManufacturerLittelfuse
DescriptionMOSFET N-CH 600V 10A TO263
DatasheetsDownload IXTA10N60P Datasheet PDFPDF Icon
Price for IXTA10N60P

Specification of IXTA10N60P

Status
Active
Series
Polar
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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