IXTD4N80P-3J

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Overview of IXTD4N80P-3J

Part NumberIXTD4N80P-3J
ManufacturerLittelfuse
DescriptionMOSFET N-CH 800V 3.6A DIE
Price for IXTD4N80P-3J

Specification of IXTD4N80P-3J

Status
Obsolete
Series
PolarHV™
Package
Bulk
Supplier
IXYS
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
5.5V @ 100A
Gate Charge (Qg) (Max) @ Vgs
14.2 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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