LSIC1MO120G0120

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Overview of LSIC1MO120G0120

Part NumberLSIC1MO120G0120
ManufacturerLittelfuse
DescriptionMOSFET SIC 1200V 18A TO247-4L
DatasheetsDownload LSIC1MO120G0120 Datasheet PDFPDF Icon
Price for LSIC1MO120G0120

Specification of LSIC1MO120G0120

Status
Active
Package
Tube
Supplier
Littelfuse Inc.
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
150mOhm @ 14A, 20V
Vgs(th) (Max) @ Id
4V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 20 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
113 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

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