MSCSM120TAM11CTPAG

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Overview of MSCSM120TAM11CTPAG

Part NumberMSCSM120TAM11CTPAG
ManufacturerMicrochip Technology
DescriptionPM-MOSFET-SIC-SBD~-SP6P
DatasheetsDownload MSCSM120TAM11CTPAG Datasheet PDFPDF Icon
Price for MSCSM120TAM11CTPAG

Specification of MSCSM120TAM11CTPAG

Status
Active
Package
Tube
Supplier
Microchip Technology
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
251A (Tc)
Rds On (Max) @ Id, Vgs
10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id
2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
9060pF @ 1000V
Power - Max
1.042kW (Tc)
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
SP6-P

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